Don't Miss SiCOMB's next Seminar!

SiCOMB is delighted to invite you to its next online seminar: “Exploring the innovations behind the methodology of the SiCOMB Project” which will take place on the 15 of March at 15.30 CEST. 

For this session, three of SICOMB’s researchers will give you an insight behind their contribution in to this project, the innovations in their research and what it means for this ground breaking application. Find below the outline for this exciting event.

  •  From initial materials findings to the future ground-breaking applications

Speaker: Mikael Syväjärvi

“Radical new technologies are based on experiences in materials growth that builds competence to address challenges in the emerging technology concepts. The presentation shares experiences in building new avenues for European research and innovation in SiC and the technology relation to sustainable goals.

  • Low temperature (T<800°C) deposition of SiC thin films by activated processes (PECVD, PVD, HWCVD)

Speaker: Didier Chaussende

The presentation will introduce the main approaches to deposit SiC thin films at low temperature. For kinetic reasons, the processes have to be activated by plasma or hot filament. This allows to deposit down to room temperature, i.e. on thermally sensitive substrates. The link between deposition conditions and film properties will be discussed.

  • Introduction to Chemical Vapor Deposition of 3C-SiC on Si at T=800 to 1200°C compatible to Si-CMOS Technology

Speaker: Peter Wellmann

The presentation will give a general introduction to chemical vapor deposition of cubic SiC on Si-wafer using the gas precursors silane and propane. Beside the experimental setup, issues of seeding of 3C-SiC on Si as well as challenges of the layer deposition process will be discussed.

Overall, an exciting opportunity not to miss if you want to further understand SiC Manipulation!

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